Daegu Gyeongbuk Institute of Science and Technology (DGIST) has succeeded in developing a key know-how that can advance the period of next-generation “neuromorphic semiconductors.”
DGIST introduced on the fifth that a analysis crew from the Nanotechnology Research Department of Lee Hyun-joon and Noh Hee-yeon succeeded in implementing the world’s first “two-terminal artificial intelligence (AI) semiconductor” that learns and remembers hydrogen by exactly controlling it with electrical indicators.
Lee Hyun-joon, a senior researcher, mentioned, “This study is significant in that it has presented a new resistance switching mechanism using ‘hydrogen movement’ that is completely different from existing oxygen vacancy-based memories beyond simply developing another AI semiconductor.”
Meanwhile, the examine was chosen as a cowl paper for the American Chemical Society (ACS) Applied Materials and Interfaces, a international tutorial journal in the sphere of supplies and interfaces.
[Reporter Woosung]
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